Published November 2002
| Version v1
Journal article
Introduction of radiation defects in GaAs at high temperatures
Description
The work is aimed at studying the dose dependences of the radiation defects (RD) concentrations by the GaAs irradiation through electrons in the diodes with the Schottky barrier. The irradiation took place within the temperature range of 380-550 deg C. It is shown, that the RD concentration is proportional to the irradiation dose and that the velocity of the RD introduction does not depend on the temperature in the measured range
Abstract (Russian)
Цель работы - изучение дозовых зависимостей концентрации радиационных дефектов (РД) при облучении электронами GaAs в диодах с барьером Шоттки. Облучение происходит в интервале 380-550 град С. Показано, что концентрация РД пропорциональна дозе облучения и что скорости введения РД не зависят от температуры в измеряемом интервалеAdditional details
Additional titles
- Original title (Russian)
- Введение радиационных дефектов в GaAs при высоких температурах
Publishing Information
- Journal Title
- Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
- Journal Volume
- 45
- Journal Issue
- 11
- Journal Page Range
- p. 89-90
- ISSN
- 0021-3411
- CODEN
- IVUFAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 35033867
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ELECTRONS; GALLIUM ARSENIDES; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION DOSES; SCHOTTKY BARRIER DIODES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOSES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE
Optional Information
- Notes
- 5 refs., 2 figs.