Quantum mechanical modeling and simulation of a multiple-channel FET

In this paper we present our numerical study on the short-channel performance of a multiple channel field effect transistor (FET) where the gate is placed at the center of the fin to form multi-channels. Our theoretical study is based on a solution of a Poisson-Schrodinger equations in a self-consistent manner. The performances of multiple-channel FET, including the current drive, the transconductance, the sub-threshold swing, the threshold voltage roll-off, and the drain-induce barrier lowering, are discussed in detail. The calculated current-voltage (I-V) characteristics were also compared with experimental data. Our simulation results imply that the structural dimensions, such as the channel-body thickness and the gate length (Lg), should be optimized for efficient suppression of the short-channel effects in a nanometer-scale multiple-channel FET.