Evidence of different confinement regimes in site-controlled pyramidal InGaN structures

We deposited InGaN on GaN micropyramids, which were grown by selective metal-organic vapor phase epitaxy on sapphire. We expected the formation of a quantum well on the side-walls of the pyramids, a quantum wire on the edges, and a quantum dot on its apex. We studied the emission properties of these structures using low-temperature time-resolved photoluminescence. Our measurements showed three regions of different confinement within the emission in the wavelength range between 2.12 eV and 2.40 eV. By analyzing the decay behavior, the characteristics of the luminescence was determined to originate from localized states. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)