Published 2000
| Version v1
Journal article
On a feature of the molecular effect for light ions in silicon
Creators
- 1. Sankt-Peterburgskij Gosudarstvennyj Univ., Sankt-Peterburg (Russian Federation)
Description
One studied the molecular effect at accumulation of radiation damages during N1+ and N2+ nitrogen ion irradiated crystalline silicon that was preliminary partially disordered by Si+ ions under 20 deg C. It was revealed that in case when prior to nitrogen ion irradiation one heated the crystal under 250-350 deg C then the distributions in defect accumulation during the subsequent bombardment by N1+ and N2+ ions would disappear
Abstract (Russian)
Исследован молекулярный эффект при накоплении радиационных повреждений в процессе облучения ионами азота N1+ и N2+ кристаллического кремния, предварительно частично разупорядоченного ионами Si+ при 20 град. С. Обнаружено, что если перед облучением ионами азота кристалл прогреть при 250-350 град. С, то различия в накоплении дефектов при последующей бомбардировке ионами N1+ и N2+ исчезаютAdditional details
Additional titles
- Original title (Russian)
- Об одной особенности молекулярного эффекта в кремнии для легких ионов
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 64
- Journal Issue
- 4
- Journal Page Range
- p. 716-720
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- 14. International conference on ion surface interaction
- Original Conference Title
- 14. Mezhdunarodnaya konferentsiya po vzaimodejstviyu ionov s poverkhnost'yu
- Dates
- 30 Aug - 4 Sep 1999
- Place
- Zvenigorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 32017650
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTALS; DEPTH; HEATING; ION IMPLANTATION; MOLECULAR IONS; NITROGEN IONS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON IONS; SPATIAL DISTRIBUTION
- Descriptors DEC
- CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELEMENTS; IONS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- 8 refs., 2 figs.