Published May 1984 | Version v1
Journal article Metadata-only

Surface effect on radiation-induced defects in silicon under high temperature proton irradiation

Creators

Description

The purpose of the paper is to investigate the process of radiation defect formation (RDF) in silicon by observation of impurity (phosphorus, antimony and boron) transport as a result of proton irradiation at 200-700 deg C. Measurements of concentration profiles of impurity distribution (CPID) have been conducted using the method of secondary-ion mass spectroscopy. Some mechanisms of RDF in the near-surface crystal layers are considered for explanation of the obtained CPIP

Additional details

Additional titles

Original title (Russian)
Влияние поверхности на радиационное дефектообразование в кремнии при высокотемпературном протонном облучении

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
18
Journal Issue
5
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
956-958
ISSN
0015-3222

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
16032245
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANTIMONY ADDITIONS; BORON ADDITIONS; CRYSTAL DEFECTS; HIGH TEMPERATURE; KEV RANGE 10-100; PHOSPHORUS ADDITIONS; PHYSICAL RADIATION EFFECTS; PROTONS; SILICON; SPATIAL DISTRIBUTION; SURFACES; TEMPERATURE DEPENDENCE
Descriptors DEC
BARYONS; CATIONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; IONS; KEV RANGE; NUCLEONS; RADIATION EFFECTS; SEMIMETALS

Optional Information

Notes
For English translation see the journal Soviet Physics - Semiconductors (USA).