Investigation of Electron-Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

Electron-hole recombination-activated partial dislocations in 4H silicon carbide homoepitaxial layers and their behavior have been studied using synchrotron X-ray topography and electroluminescence. Stacking faults whose expansion was activated by electron-hole recombination enhanced dislocation glide were observed to be bounded by partial dislocations, which appear as white stripes or narrow dark lines in back-reflection X-ray topographs recorded using the basal plane reflections. Such contrast variations are attributable to the defocusing/focusing of the diffracted X-rays due to the edge component of the partial dislocations, which creates a convex/concave distortion of the basal planes. Simulation results based on the ray-tracing principle confirm our argument. Observations also indicate that, when an advancing partial dislocation interacts with a threading screw dislocation, a partial dislocation dipole is dragged behind in its wake. This partial dislocation dipole is able to advance regardless of the immobility of the C-core segment. A kink pushing mechanism is introduced to interpret the advancement of this partial dislocation dipole.