Published December 1996 | Version v1
Journal article Metadata-only

Formation of bound excitons by photoexcited carriers in p-type GaAs revealed by picosecond luminescence spectroscopy

Creators

  • 1. Tata Institute of Fundamental Research, Bombay 400005 (India)
  • 2. Scuola Normale Superiore and Istituto Nazionale per la Fisica della Materia, I-56126 Pisa (Italy)

Description

We report on the time evolution of photoluminescence (PL) spectra in molecular-beam-epitaxy grown p-type GaAs (p=5x1016 cm-3), following electron-hole pair excitation by picosecond laser pulses at densities of about 6x1016 cm-3. We perform both upconversion (UC) and photoexcitation-correlation (PEC) PL measurements for delays up to 1 ns. The UC and PEC PL results imply significant formation of bound excitons by electron-hole pairs in less than 1 ns. copyright 1996 The American Physical Society

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
54
Journal Issue
24
Journal Page Range
p. 17591-17595.
ISSN
0163-1829
CODEN
PRBMDO

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
28017471
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRON-HOLE DROPLETS; EXCITONS; GALLIUM ARSENIDES; LASER RADIATION; MOLECULAR BEAM EPITAXY; P-TYPE CONDUCTORS; PHOTOLUMINESCENCE; TIME RESOLUTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; RADIATIONS; RESOLUTION; SEMICONDUCTOR MATERIALS; TIMING PROPERTIES