Published May 29, 2015 | Version v1
Journal article

Effect of the burn-out step on the microstructure of the solution-processed Cu(In,Ga)Se2 solar cells

  • 1. SIM vzw, Technologiepark 935, 9052 Zwijnaarde (Belgium)
  • 2. Electron Microscopy for Materials Science (EMAT), University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium)
  • 3. imec—partner in Solliance, Kapeldreef 75, 3001 Heverlee (Belgium)
  • 4. Department of Electrical Engineering (ESAT), KU Leuven, Kasteelpark Arenberg 10, 3001 Heverlee (Belgium)
  • 5. Department of Materials Engineering (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Heverlee (Belgium)
  • 6. Electronics and Information Systems Department (ELIS), University of Gent, Sint-Pietersnieuwstraat 41, 9000 Gent (Belgium)
  • 7. Institute for Material Research (IMO), Hasselt University, Wetenschapspark 1, 3590 Diepenbeek (Belgium)
  • 8. imec division IMOMEC—partner of Solliance, Wetenschapspark 1, 3590 Diepenbeek (Belgium)

Description

For the development of the photovoltaic industry cheap methods for the synthesis of Cu(In,Ga)Se2 (CIGSe) based solar cells are required. In this work, CIGSe thin films were obtained by a solution-based method using oxygen-bearing derivatives. With the aim of improving the morphology of the printed CIGSe layers, we investigated two different annealing conditions of the precursor layer, consisting of (1) a direct selenization step (reference process), and (2) a pre-treatment thermal step prior to the selenization. We showed that the use of an Air/H2S burn-out step prior to the selenization step increases the CIGSe grain size and reduces the carbon content. However, it leads to the reduction of the solar cell efficiency from 4.5% in the reference sample down to 0.5% in the annealed sample. Detailed transmission electron microscopy analysis, including high angle annular dark field scanning transmission electron microscopy and energy dispersive X-ray mapping, was applied to characterize the microstructure of the film and to determine the relationship between microstructure and the solar cell performance. We demonstrated that the relatively low efficiency of the reference solar cells is related not only to the nanosize of the CIGSe grains and presence of the pores in the CIGSe layer, but also to the high amount of secondary phases, namely, In/Ga oxide (or hydroxide) amorphous matter, residuals of organic matter (carbon), and copper sulfide that is formed at the CIGSe/MoSe2 interface. The annealing in H2S during the burn-out step leads to the formation of the copper sulfide at all grain boundaries and surfaces in the CIGSe layer, which results in the noticeably efficiency drop. - Highlights: • Cu(Ga,In)Se2 solar cells were synthesized by a solution-based method. • The morphology of the CIGSe layer improves during the annealing. • The efficiency of the reference sample is 4.5% and of the annealed is 0.5%. • Upon the annealing, copper sulfide segregates at the surface of the CIGSe grains. • Presence of the admixture phases leads to the drop of solar cells efficiency

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2015.03.063

Additional details

Identifiers

DOI
10.1016/j.tsf.2015.03.063;
PII
S0040-6090(15)00331-4;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
583
Journal Page Range
p. 142-150
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.