Electrical characteristics due to differences in crystal damage induced by various implant conditions

Small differences in initial implant damage change electrical characteristics on devices in spite of implantation at the same dose and energy. Typically, R s shifts are easily found if a beam current changes. It can be mentioned specially that this phenomenon tends to become more significant for nodes beyond 90 nm than for the larger scale device generations. In some cases, it can cause troubles in the process control. These phenomena can be explained by competition between the quantity of ion cascades and the relatively slow (millisecond order) recombination rate of interstitial silicon atoms and vacancies at a temperature of lower than 80 deg. C. This phenomenon is more common for heavier ions; arsenic and BF2