Published 1978
| Version v1
Miscellaneous
Determination of concentration profiles of As impurity atoms in silicon crystals from characteristic X radiation, induced by H+ and He+ ions
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Нахождение концентрационных профилей примесных атомов Ас в кристаллах кремния по характеристическомы рентгеновскому излучению, возбуждаемому ионами Х
Publishing Information
- Imprint Title
- Pre-conference program and summaries of reports of the 9. All-union conference on physics of charged particle and crystal interaction
- Journal Page Range
- p. 43.
Conference
- Title
- 9. All-union conference on physics of charged particle and crystal interaction.
- Dates
- 29 - 31 May 1978.
- Place
- Moscow, USSR.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 11500952
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ARSENIC ADDITIONS; CRYSTALS; ENERGY DEPENDENCE; HELIUM IONS; HYDROGEN IONS; ION IMPLANTATION; MEV RANGE 01-10; NUMERICAL SOLUTION; SILICON; SPATIAL DISTRIBUTION; X RADIATION
- Descriptors DEC
- CHARGED PARTICLES; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; IONIZING RADIATIONS; IONS; MEV RANGE; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- 3 refs.; short note. Imprint:Predvaritel'naya programma i tezisy dokladov 9. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.