Published March 26, 2014
| Version v1
Journal article
Fatigue crack growth behavior of Al–Mg–Sc alloy
Creators
- 1. School of Materials Science and Engineering, Central South University, Changsha 410083 (China)
- 2. The Key Laboratory of Nonferrous Materials Science and Engineering of Ministry of Education, Central South University, Changsha 410083 (China)
Description
The Al–Mg–Sc alloy sheets were prepared using water chilling copper mold ingot metallurgy processing which was protected by active flux. The microstructure and mechanical properties of the Al–Mg–Sc alloy were studied by means of transmission electron microscopy (TEM), scanning electron microscopy (SEM), optical microscopy (OM) and tensile and fatigue crack growth (FCG) rate tests. The FCG rate (da/dN) with stress intensity factor range (ΔK) was discussed within the Paris region. The Al–Mg–Sc alloy exhibited high resistance against fatigue crack growth, and the second phase of Al3(Sc1−xZrx) was found to be the main factor influencing the FCG resistance
Availability note (English)
Available from http://dx.doi.org/10.1016/j.msea.2014.01.045Additional details
Identifiers
- DOI
- 10.1016/j.msea.2014.01.045;
- PII
- S0921-5093(14)00076-8;
Publishing Information
- Journal Title
- Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing
- Journal Volume
- 598
- Journal Page Range
- p. 350-354
- ISSN
- 0921-5093
- CODEN
- MSAPE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46047651
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; COPPER; CRACK PROPAGATION; FATIGUE; FUNGI; METALLURGY; MICROSTRUCTURE; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; STRESS INTENSITY FACTORS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALLOYS; ELECTRON MICROSCOPY; ELEMENTS; MECHANICAL PROPERTIES; METALS; MICROSCOPY; PLANTS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.