Designs of Q-switching Laser Power Supply with High Voltage Narrow Pulse
- 1. China North Vehicle Research Institue, Beijing 100072 (China)
Description
Based on the pulse generation principle of Q-switching and cavity-dumping technologies, this paper designs a power supply with high voltage and narrow pulse for switching avalanche transistor with rising edge of ns level. In the power supply, an avalanche transistor and VOMS transistor are matched to design a driving circuit, which outputs 4.6ns narrow pulse signal. The circuit replaces the traditional cable transmission signal drive mode, reduces the whole signal transmission distance, and improves the signal transmission stability. It makes the two ends of the laser Q-switched crystal KD*P be pushed off instantaneously, which shortened the output laser pulse width from 18ns to 5.6ns. The power supply with high voltage and narrow pulse can be well used in many laser fields including communication, medical treatment, ocean exploration, etc. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1748/5/052012Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1748
- Journal Issue
- 5
- Journal Page Range
- [6 p.]
- ISSN
- 1742-6596
Conference
- Title
- 5. International Seminar on Computer Technology, Mechanical and Electrical Engineering
- Acronym
- ISCME 2020
- Dates
- 30 Oct - 1 Nov 2020
- Place
- Shenyang (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53093978
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTALS; DESIGN; ELECTRIC POTENTIAL; LASER RADIATION; LASERS; PULSES; Q-SWITCHING; SIGNALS; TRANSISTORS; TRANSMISSION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; RADIATIONS; SEMICONDUCTOR DEVICES