Study of luminescence and structure of GaSb crystals grown from nonstoichiometric melts

Electrical properties, luminescence and structural quality have been studied in the GaSb crystal grown by Czochralski method from the melts with a high Ga or Sb excess. Transmission electron microscopy showed that gallium excess in the melt led to precipitation with particle size of about 100 nm and density of 109 cm-3. The GaSb matrix of such crystals kept perfect. Their electrical properties and luminescence spectra were similar to those of the crystals grown from the stoichiometric melts. 9 refs., 3 figs