Published June 1, 2016 | Version v1
Journal article

Enhanced thermal spin transfer in MgO-based double-barrier tunnel junctions

  • 1. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000 (China)
  • 2. Department of Physics, Beijing Normal University, Beijing 100875 (China)
  • 3. Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006 (China)

Description

Based on atomic first principles, we predict enhanced thermal spin transfer (TST) effects and small switching temperature gradient in Fe | MgO | Fe | MgO | Fe double-barrier magnetic tunnel junctions (MTJs). At room temperature, temperature gradient Δ T ∼10 K with T ∼10 K nm−1 across barriers would be sufficient to switch the magnetic configurations circularly in a junction with 3 MgO atomic layers (L), which is about one order smaller than that in Fe | MgO(3L) | Fe MTJs. This temperature gradient is under the current experimental capability. The resonant quantum-well states in companion with resonant interfacial states are responsible for the enhancement. Moreover, a thermal induced 'off' state is found in a double-barrier MTJ. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1367-2630/18/6/063012

Additional details

Publishing Information

Journal Title
New Journal of Physics
Journal Volume
18
Journal Issue
6
Journal Page Range
[7 p.]
ISSN
1367-2630