Published 1999 | Version v1
Report

Kinetics of the nanosecond laser annealing of silicon implanted with impurities

Description

no abstract available

Availability note (English)

Available from British Library Document Supply Centre- DSC:9023.190(VR-Trans--8948)T

Additional details

Publishing Information

Imprint Pagination
4 p.
Report number
VR-Trans--8948

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
30047156
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Translation, Non-conventional Literature
Descriptors DEI
ANNEALING; LASER RADIATION; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; MATERIALS; RADIATIONS; SEMIMETALS

Optional Information

Notes
Translated from Russian (Fiz. Khim. Obrab. Mater. 1996 (2) p. 25-29)