Published 1999
| Version v1
Report
Kinetics of the nanosecond laser annealing of silicon implanted with impurities
Description
no abstract available
Availability note (English)
Available from British Library Document Supply Centre- DSC:9023.190(VR-Trans--8948)TAdditional details
Publishing Information
- Imprint Pagination
- 4 p.
- Report number
- VR-Trans--8948
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 30047156
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Translation, Non-conventional Literature
- Descriptors DEI
- ANNEALING; LASER RADIATION; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; MATERIALS; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- Translated from Russian (Fiz. Khim. Obrab. Mater. 1996 (2) p. 25-29)