Published January 27, 1992
| Version v1
Journal article
Comment on ''Evidence for superconductivity in low-temperature--grown GaAs''
Creators
- 1. Department of Physics, Brookhaven National Laboratory, Upton, New York 11973-5000 (United States)
- 2. Center for Electronic Materials and Processing, Department of Electrical and Computer Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Description
A Comment on the Letter by J. M. Baranowski et al., Phys. Rev. Lett. 66, 3079 (1991)
Additional details
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 68
- Journal Issue
- 4
- Series
- Phys. Rev. Lett.
- Journal Page Range
- 550
- ISSN
- 0031-9007
- CODEN
- PRLTA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23078497
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ADDITIONS; SUPERCONDUCTIVITY; TEMPERATURE RANGE 0000-0013 K
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE