Growth morphology and compositional analysis of InxGa1-xSb crystals-grown by vertical directional solidification technique

InxGa1-xSb (x = 0.5) single crystals of 12 mm diameter and 50-60 mm length have been grown from stoichiometric source materials by using vertical directional solidification technique. The optimized growth conditions are ampoule translation velocity 0.84 μm/sec, rotation speed 10 rpm and ampoule with argon pressure (100 torr). The axial compositional profile has been determined by Vegard-law and showed mixing of the melt. Hall measurements reveal the conversion of n-type to p-type conduction along the growth axis and vice versa. Radial resistivity measurements by four probe exhibited the nearly homogeneous growth. The growth morphology was attributed to the intrinsic crystallographic microstructures. (author)