Published July 2006
| Version v1
Journal article
On the criterion of the construction of a local model potential for silicon
Creators
- 1. National University 'Lvivs'ka Politekhnika', Lviv (Ukraine)
Description
The goal of this work is to study the sensitivity of the band energies to the choice of a model of the potential of a crystal, in particular to the depth of a model Coulomb potential well. We will illustrate this dependence by the direct calculation with the use of a mixed basis
Additional details
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kiev)
- Journal Volume
- 51
- Journal Issue
- no.7
- Journal Page Range
- p. 675-679
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 38054328
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ATOMS; BAND THEORY; BLOCH EQUATIONS; COULOMB FIELD; ELECTRON DENSITY; ENERGY SPECTRA; HAMILTONIANS; SILICON; THEORETICAL DATA
- Descriptors DEC
- DATA; ELECTRIC FIELDS; ELEMENTS; EQUATIONS; INFORMATION; MATHEMATICAL OPERATORS; NUMERICAL DATA; QUANTUM OPERATORS; SEMIMETALS; SPECTRA