Cyclic nanoindentation studies of HgCdTe epitaxial films
Creators
- 1. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi (India)
- 2. Indian Institute of Technology, Hauz Khas, New Delhi (India)
Description
Hg1−xCdxTe (x∼0.29) epitaxial films have been subjected to cyclic nanoindentation using spherical indenter from tribological aspects related to the development of polishing process for preparing defect free surface. Different loading/unloading rates of 0.5, 1 and the 4 mNs−1 with a peak load of 10 mN were used for 10 nanoindentation cycles. An open jaw shape was observed in the load-displacement curve for loading/unloading rate of 0.5 mNs−1, while hysteresis loops were observed for 1 and 4 mNs−1 loading/unloading rates. This phenomenon is explained in light of the regimes of elastic/anelastic deformation and smooth plastic flow. Pop-in during first loading cycle was observed at loading/unloading rates of 1 and 4 mNs−1, which was attributed to elasto-plastic transition. Multiple pop-in events of low extent were also found in the form of serrations in load-displacement curves for loading/unloading rates of 0.5 and 1 mNs−1. Based on these observations, the maximum load and minimum loading rate during polishing process for this material has been suggested. The mechanical properties of these films, such as contact stiffness and hardness have been extracted for different loading/unloading rates. The effect of indenter geometry on deformation behaviour using Berkovich indenter is also reported. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1591/ab688eAdditional details
Identifiers
Publishing Information
- Journal Title
- Materials Research Express (Online)
- Journal Volume
- 7
- Journal Issue
- 1
- Journal Page Range
- [11 p.]
- ISSN
- 2053-1591
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52109274
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEFECTS; DEFORMATION; EPITAXY; FLEXIBILITY; HARDNESS; PLASTICITY; SURFACES
- Descriptors DEC
- CRYSTAL GROWTH METHODS; MECHANICAL PROPERTIES; TENSILE PROPERTIES