Published January 1, 2020 | Version v1
Journal article

Cyclic nanoindentation studies of HgCdTe epitaxial films

  • 1. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi (India)
  • 2. Indian Institute of Technology, Hauz Khas, New Delhi (India)

Description

Hg1−xCdxTe (x∼0.29) epitaxial films have been subjected to cyclic nanoindentation using spherical indenter from tribological aspects related to the development of polishing process for preparing defect free surface. Different loading/unloading rates of 0.5, 1 and the 4 mNs−1 with a peak load of 10 mN were used for 10 nanoindentation cycles. An open jaw shape was observed in the load-displacement curve for loading/unloading rate of 0.5 mNs−1, while hysteresis loops were observed for 1 and 4 mNs−1 loading/unloading rates. This phenomenon is explained in light of the regimes of elastic/anelastic deformation and smooth plastic flow. Pop-in during first loading cycle was observed at loading/unloading rates of 1 and 4 mNs−1, which was attributed to elasto-plastic transition. Multiple pop-in events of low extent were also found in the form of serrations in load-displacement curves for loading/unloading rates of 0.5 and 1 mNs−1. Based on these observations, the maximum load and minimum loading rate during polishing process for this material has been suggested. The mechanical properties of these films, such as contact stiffness and hardness have been extracted for different loading/unloading rates. The effect of indenter geometry on deformation behaviour using Berkovich indenter is also reported. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/ab688e

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
7
Journal Issue
1
Journal Page Range
[11 p.]
ISSN
2053-1591

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52109274
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DEFECTS; DEFORMATION; EPITAXY; FLEXIBILITY; HARDNESS; PLASTICITY; SURFACES
Descriptors DEC
CRYSTAL GROWTH METHODS; MECHANICAL PROPERTIES; TENSILE PROPERTIES