Published 1990 | Version v1
Book Metadata-only

Emitters structures in MOCVD InP solar cells

Creators

  • 1. Spire Corp., Bedford, MA (USA)

Description

InP solar cells have been made by MOCVD with a graded-junction or front-surface-field structure, in which the doping decreases from 3 x 1018 cm-3 at the surface to 3 x 1019 cm-3 at the junction. Improvement was observed in both the short- wavelength quantum efficiency and the overall-conversion efficiency, relative to standard shallow-homojunction cells, indicating that the graded structure improved collection of carriers generated near the surface. A beginning-of-life conversion efficiency of 19.1% AMO was measured on a 4 cm2 cell. Measurements on similar cells show an average of 4.7% degradation after irradiation with 1014 cm-2 electrons at 1 MeV

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
Twenty first IEEE photovoltaic specialists conference 1990 (Conference Record)
Imprint Pagination
1673 p.
Journal Page Range
p. 141-144.

Conference

Title
21. Institute for Electrical and Electronics Engineers (IEEE) photovoltaic specialists conference.
Dates
21-25 May 1990.
Place
Kissimmee, FL (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22053075
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; ELECTRONS; INDIUM PHOSPHIDES; IRRADIATION; MEV RANGE 01-10; ORGANOMETALLIC COMPOUNDS; PHYSICAL RADIATION EFFECTS; QUANTUM EFFICIENCY; SOLAR CELLS
Descriptors DEC
CHEMICAL COATING; DEPOSITION; DIRECT ENERGY CONVERTERS; EFFICIENCY; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ENERGY RANGE; EQUIPMENT; FERMIONS; INDIUM COMPOUNDS; LEPTONS; MEV RANGE; ORGANIC COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATION EFFECTS; SURFACE COATING

Optional Information

Secondary number(s)
CONF-900542--.