Published April 30, 2004 | Version v1
Journal article

Numerical analysis for charge accumulation on the chunnel of field emission devices

Description

Charge accumulations on the wall of the chunnels in field emission devices are analyzed with the Monte Carlo method. The chunnel's wall is dielectric, and secondary electrons are generated when electrons hit the chunnel's wall. Under the electron bombardment, the secondary emission induces charging on the wall. It is implied that in the field emission process, the upper part of the chunnel's inside wall is positively charged, while the lower part of the chunnel's inside wall and the chunnel's underside wall are negatively charged. Four models with different forms of chunnels are studied. We analyze the effect of charge accumulation in different models by comparing the potential distributions near the cathode and the current density distributions of the cathode, respectively. The results show that increasing the slope of the chunnels will reduce charge accumulations at the chunnel's underside wall. Also, the energy distributions of electrons arriving at the anode are analyzed, and it suggests that the chunnel's slope may decrease the ratio of primary electrons directly on the anode to all the electrons on the anode

Additional details

Identifiers

DOI
10.1016/j.apsusc.2004.01.031;
PII
S0169433204000303;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
228
Journal Issue
1-4
Journal Page Range
p. 277-284
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38091874
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRONS; ENERGY SPECTRA; FIELD EMISSION; MONTE CARLO METHOD; NUMERICAL ANALYSIS; SECONDARY EMISSION
Descriptors DEC
CALCULATION METHODS; ELEMENTARY PARTICLES; EMISSION; FERMIONS; LEPTONS; MATERIALS; MATHEMATICS; SPECTRA

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.