Published July 2001 | Version v1
Book Metadata-only

Photoluminescence of C-doped SiO2 films after high energy Ar and Kr ion irradiations

Creators

  • 1. Academia Sinica, Lanzhou (China). Inst. of Modern Physics
  • 2. Lanzhou Univ. (China). Dept. of Physics

Description

no abstract available

Part of:
IMP and NLHIAL annual report (2000)

Additional details

Publishing Information

Publisher
Atomic Energy Press, Beijing
Imprint Place
Beijing (China)
ISBN
7-5022-2421-1
Imprint Title
IMP and NLHIAL annual report (2000)
Imprint Pagination
190 p.
Journal Page Range
p. 37-38

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
33002808
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ARGON IONS; CARBON; DOPED MATERIALS; FILMS; ION IMPLANTATION; IRRADIATION; KRYPTON IONS; PHOTOLUMINESCENCE; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; EMISSION; IONS; LUMINESCENCE; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SILICON COMPOUNDS

Optional Information