Published 1994 | Version v1
Book Metadata-only

Neutron radiation effects in HEMTs

Creators

  • 1. Athens Univ. (Greece)
  • 2. National Research Centre for the Physical Sciences Democritos, Athens (Greece)

Description

HEMTs have been irradiated with fast neutrons at fluences up to 1016n/cm2. At large enough fluences the two dimensional electron gas vanishes and the device turn into AlGaAs MESFETs. The majority carrier traps responsible for the degradation have been investigated. A charge control model has been introduced to simulate the shift of the threshold voltage and to determine the carrier removal rate in the AlGaAs donor layer. (author). 8 refs., 6 figs., 1 tab

Part of:
Radiation and its effects on components and systems

Additional details

Publishing Information

Publisher
Commissariat a l'Energie Atomique.
Imprint Place
Bruyeres-le-Chatel (France)
Imprint Title
Radiation and its effects on components and systems
Imprint Pagination
596 p.
Journal Page Range
p. 207-212.

Conference

Title
2. European Conference on Radiation and its Effects on Components and Systems.
Dates
13-16 Sep 1993.
Place
Saint-Malo (France).

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
27008789
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; CARRIER MOBILITY; CONCENTRATION RATIO; CRYSTAL DEFECTS; CRYSTAL LATTICES; DAMAGING NEUTRON FLUENCE; ENERGY GAP; FERMI LEVEL; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHONONS; PHYSICAL RADIATION EFFECTS; POST-IRRADIATION EXAMINATION; SCHOTTKY BARRIER DIODES
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ENERGY LEVELS; GALLIUM COMPOUNDS; MOBILITY; NEUTRON FLUENCE; PNICTIDES; QUASI PARTICLES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS

Optional Information