Published January 4, 2010 | Version v1
Journal article

Optical And Mass Spectrometric Investigation Of The Interaction Of Hydrogen With Nitrogen In (In)GaAsN Layers

  • 1. Department of Engineering Physics, University of Applied Sciences, Lothstrasse 34, 80335 Munich (Germany)
  • 2. Fraunhofer Institute IAF, Tullastrasse 72, 79108 Freiburg (Germany)
  • 3. Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

Description

Fourier transform infrared absorption spectroscopy and secondary ion mass spectroscopy have been carried out on GaAs based dilute nitride layers after treatment with H+ or D+ ions. Formation of N-H (D-H) centers is detected by vibrational absorption bands of H (D). The modes are assigned to two different complexes, each involving one H (D) atom. A major fraction of the hydrogen in the layers might be not or only loosely bound to nitrogen.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1199
Journal Issue
1
Journal Page Range
p. 87-88
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
29. international conference on the physics of semiconductors
Dates
27 Jul - 1 Aug 2008
Place
Rio de Janeiro (Brazil)

Optional Information

Notes
(c) 2009 American Institute of Physics