Injection laser based on solid solutions

The generation of coherent radiation in diffusion diodes on the Insub(1-x)Gasub(x)P base with x=0.25 was obtained. Epitaxial films of Insub(1-x)Gasub(x)P were grown by the method of chemical transport reactions on the GaAS p-type substrate, oriented on the/100/ plane. In the process of the growth the films were alloyed by tellurium up to the concentration of 1x1018 cm-3. The p-n transition was created by zinc diffusion at the excessive arsenic pressure in evacuated quarz ampoule at 750 deg C during an hour. The p-n transition was detected at the depth about 25 μm. At 77 K the spectrum of spontaneous radiation of diodes in the range of low current densities consists of two radiation bands with mutual width at the half-height more than 130 nm and with a maximum at 780 nm. A short-wave band shifts to the region of large energies with the growth of current density and becomes dominating in the radiation spectrum. At high excitation levels a substantial narrowing of the radiation band is observed. Diodes generated at the wave length of 777 nm and at the current density more than 7.2 kA/cm2. While studying the output power of spontaneous diode radiation at d.c., it was obtained that the external quantum efficiency of radiation was equal to 1.45 % at 77 K and 0.1 at 300 K. The maximum output power of spontaneous diode radiation is about 1 mW at the current about 30 mA at 77 K, and 150 μW at 100 mA and 300 K. The maximum output diode power reached 1 W in an impulse at the recurrence frequency of 100 Hz and duration of 0.5 μs in the regime of coherent radiation generation