Precipitation of boron atoms implanted in silicon as detected by channeling analysis

The precipitation of boron atoms in a silicon crystal which had been heavily implanted with boron ions at room temperature and then postannealed at high temperatures was studied by channeling analysis of the α-particles induced by the 11B(p,α)8 Be nuclear reaction. It was found that boron atoms which exceed the solubility limit precipitate on 〈110〉 strings in the region of the highest boron concentration (around the boron ion range) with a lattice distance somewhat different from that of the host crystal after annealing at 900 °C.