Atomic, electronic and transport properties of In–Au 2D compound on Si(1 0 0)

Two-dimensional (In, Au)/Si(1 0 0)c(2 2) compound was synthesized and its atomic arrangement, electron band structure and low-temperature transport properties were characterized using scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and four-point-probe resistivity measurements assisted with first-principles density-functional-theory calculations. The present results are compared to those obtained earlier for the parent (Tl, Au)/Si(1 0 0)c(2 2) system. (paper)