Published 2013 | Version v1
Book

Atomic simulation of dislocations in the structures of silicon-on-silicon produced by direct bonding

Creators

  • 1. Inst. Kristallografii RAN, Moscow (Russian Federation)

Description

no abstract available

Part of:
The Fifth International conference Deformation and fracture of materials and nanomaterials DFMN-2013. Conference proceedings

Additional details

Additional titles

Original title (Russian)
Атомное моделирование дислокаций в структурах кремний на кремнии, получаемых методом прямого сращивания

Publishing Information

Publisher
IMET RAN
Imprint Place
Moscow (Russian Federation)
ISBN
978-5-4253-0630-2
Imprint Title
The Fifth International conference Deformation and fracture of materials and nanomaterials DFMN-2013. Conference proceedings
Imprint Pagination
958 p.
Journal Page Range
p. 809-810

Conference

Title
5. international conference on deformation and fracture of materials and nanomaterial
Original Conference Title
V Mezhdunarodnaya konferentsiya Deformatsiya i razrushenie materialov i nanomaterialov DFMN-2013
Acronym
DFMN-2013
Dates
26-29 Nov 2013
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
47045253
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference
Descriptors DEI
ATOMIC MODELS; BONDING; MOLECULAR DYNAMICS METHOD; MONOCRYSTALS; PLATES; SCREW DISLOCATIONS; SILICON
Descriptors DEC
CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DISLOCATIONS; ELEMENTS; FABRICATION; JOINING; LINE DEFECTS; MATHEMATICAL MODELS; SEMIMETALS

Optional Information

Notes
2 refs., 1 fig. Imprint:V Mezhdunarodnaya konferentsiya Deformatsiya i razrushenie materialov i nanomaterialov DFMN-2013. Sbornik materialov