Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of ¹³²Xe²⁶⁺ Ions with Energy of 167 MeV

Single-crystal n-Si(100) wafers are implanted with ⁶⁴Zn⁺ ions with an energy of 50 keV and dose of 5 × 10¹⁶ cm^–2. Then the samples are irradiated with ¹³²Xe²⁶⁺ ions with an energy of 167 MeV in the range of fluences from 1 × 10¹² to 5 × 10¹⁴ cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10¹⁴ cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.