Published July 1989
| Version v1
Journal article
Radiative heat treatment effects on recombination activity of dislocations in silicon
Creators
Description
Short note
Additional details
Additional titles
- Original title (Russian)
- Изменение рекомбинационной активности дислокаций при радиационно-термической обработке кремния
Publishing Information
- Journal Title
- Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
- Journal Volume
- 32
- Journal Issue
- 7
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 128
- ISSN
- 0021-3411
- CODEN
- IVUFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 21080936
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; CARRIER LIFETIME; DISLOCATIONS; GAMMA RADIATION; HIGH TEMPERATURE; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SILICON
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; LIFETIME; LINE DEFECTS; MATERIALS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS