Type-I semiconductor heterostructures with an indirect-gap conduction band

In spite of a great number of publications concerned with studies of semiconductor heterostructures, the type-I semiconductor heterostructures, in which the ground electron state belongs to the indirect-gap (X and L) minimums of the conduction band, have remained poorly understood until recently. In this paper, the possibility is discussed of using III–V semiconductor compounds to create type-I semiconductor heterostructures with electron states belonging to the indirect-gap minimums of the conduction band.