Published August 1, 2012 | Version v1
Journal article

Laplace deep level transient spectroscopy: Embodiment and evolution

  • 1. Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Sackville Str. Building, Manchester M13 9PL (United Kingdom)
  • 2. Department of Physics and Astronomy, University of Aarhus, Ny Munkegade, DK 8000 Aarhus C (Denmark)
  • 3. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

Description

This paper is to commemorate the work of Leszek Dobaczewski who devoted much of his life to the development and application of high resolution DLTS. Under good experimental conditions Laplace DLTS provides an order of magnitude higher energy resolution than conventional DLTS techniques. This has had a profound effect on electrical defect spectroscopy enabling the effect of external probes, such as uniaxial stress, and internal perturbations, such as the proximity of atoms isovalent with the host, to be quantified in terms of electronic behaviour. Laplace DLTS provides a synergy with other techniques that was difficult or impossible to achieve previously. In this paper we present an overview of the development of LDLTS and illustrate some of its uses by describing its application in a number of key areas of defect research. Leszek Dobaczewski was born on 25th December 1954. He received his education in Warsaw taking his PhD in 1986 with Jerzy Langer at the Institute of Physics on "Recombination Processes at defects with the large lattice relaxation". He held a research position at the institute in Warsaw until he came to Manchester in 1990 and thereafter alternated between Manchester and Warsaw. He worked primarily on the development and application of high resolution DLTS. He was awarded the degree of DSc in 1994 for his work on DX centres and held an appointment as full professor in Warsaw with Visiting Professor posts at Manchester and Aarhus.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2011.08.107

Additional details

Identifiers

DOI
10.1016/j.physb.2011.08.107;
PII
S0921-4526(11)00888-X;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
407
Journal Issue
15
Journal Page Range
p. 3026-3030
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
26. international conference on defects in semiconductors
Dates
18-22 Jul 2011
Place
Nelson (New Zealand)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43089924
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALLOYS; CALORIMETRY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISTURBANCES; ENERGY RESOLUTION; GERMANIUM; INTERACTIONS; PERTURBATION THEORY; RECOMBINATION; RELAXATION; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
CRYSTAL STRUCTURE; ELEMENTS; MATERIALS; METALS; RESOLUTION; SEMIMETALS; SPECTROSCOPY

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.