Charge transport study in thin film Au-CdTe Schottky diodes

Au-CdTe diodes are prepared on CdTe thin layers deposited electrochemically. Measurements of dark I-U characteristics at several temperatures and C-U characteristics at room temperature in darkness are used for the studying of charge transport in the diodes. The results can be explained by a model consisting of the series connection of an Au-CdTe Schottky barrier, several intergranular (IG) barriers in CdTe layer, and a relatively small series resistance of bulk of the grains. Some parameters of transport as the quality factor of Schottky diode, barrier heights of both Schottky, and IG barriers are obtained and the impurity concentration and number of the grain boundaries are estimated by comparison of the theory with experiment. (author)