Published July 16, 2008 | Version v1
Journal article

Scanning tunneling microscopy images of a triangular quantum dot of InAs

  • 1. Faculty of Materials Sciences, Graduate School, Saitama Institute of Technology, 1690 Fusaiji, Fukaya-City, 369-0293 Saitama (Japan)

Description

On the basis of a simple one-particle model we derived eigenstates and eigenenergies of electrons confined in an equilateral triangular quantum dot of InAs (111)A surface. Considering two subbands formed by the band bending in the InAs surface, we explained STM images observed in the differential conductance mode. It is pointed out that contributions from two subbands are indispensable for analyzing the STM images on the InAs quantum dot. Moreover, it is shown that reduction in the subband energy level induced by an applied bias voltage plays an important role in obtaining proper STM images

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/20/28/285220

Additional details

Identifiers

DOI
10.1088/0953-8984/20/28/285220;
PII
S0953-8984(08)67933-3;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
20
Journal Issue
28
Journal Page Range
[6 p.]
ISSN
0953-8984
CODEN
JCOMEL