Published April 24, 2008 | Version v1
Journal article

Structures And Magnetization Of Defect-Associated Sites In Silicon

  • 1. Department of Physics, University of Central Florida, Orlando, FL 32816-2385 (United States)
  • 2. Department of Physics, Brigham Young University, Provo, UT 84602 (United States)
  • 3. Institute of Electron Technology (ITE), al. Lotnikow 32/46, Warsaw 02-668 Poland (Poland)
  • 4. Polish Academy of Science, Institute of Physics, al Lotnikow 32/46, Warsaw 02-668 Poland (Poland)
  • 5. NHMFL, Florida State University, Tallahassee, FL 32310-3706 (United States)
  • 6. Apollo Technologies, Inc. 205 Waymont Court, Suite 111, Lake Mary, FL 32746 (United States)

Description

To better understand the mechanism of the reported 'quasi-ferromagnetism' observed in Si ions self-implanted or irradiated silicon, we carry out high resolution transmission electron microscopy (HRTEM), magnetization measurements using superconducting quantum interference device (SQUID) magnetometer, and ferromagnetic resonance (FMR) measurements of the magnetic interaction of the defect-associated sites in silicon damaged by silicon self-implantation or energetic particle beams. The SQUID measurements showed that the silicon self-implanted sample has paramagnetic ordering. FMR measurements indicated the He++ irradiated sample has a ferromagnetic interaction and yields a Lande g-factor of 2.35

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1003
Journal Issue
1
Journal Page Range
p. 248-251
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
International conference on magnetic materials
Acronym
ICMM-2007
Dates
11-16 Dec 2007
Place
Kolkata (India)

Optional Information

Notes
(c) 2008 American Institute of Physics