Published April 1984 | Version v1
Journal article Metadata-only

Effect of γ-irradiation on the properties of MDS structures

Creators

  • 1. Tashkentskij Gosudarstvennyj Univ. (USSR)

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Влияние γ-облучения на свойства MDP структур

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
18
Journal Issue
4
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
727-729
ISSN
0015-3222

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
16005908
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
CARRIER DENSITY; GAMMA RADIATION; MEDIUM TEMPERATURE; MIS TRANSISTORS; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RELAXATION TIME; SILICON; SILICON OXIDES; TEMPERATURE DEPENDENCE
Descriptors DEC
CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; TRANSISTORS

Optional Information

Notes
Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).