Published December 1, 1982
| Version v1
Patent
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Semiconductor device manufacture
Description
A semiconductor device which has a device structure formed on one of its surfaces is heat treated by continuously scanning an electron beam over the other surface of the substrate remote from the one surface. This treatment anneals the substrate or wafer after doping impurities have been implanted e.g. by an ion implantation technique. (author)
Availability note (English)
MF available from INIS under the Report Number.Files
14787862.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 2 p.
- IPC:
- Int. Cl. H01l21/324.
- IPC
- Int. Cl. H01l21/324.
- Patent number
- GB patent document 2099219/A/
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 14787862
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; DOPED MATERIALS; ELECTRON BEAMS; ELECTRON SCANNING; FABRICATION; IMPURITIES; ION IMPLANTATION; SEMICONDUCTOR DEVICES; SUBSTRATES; SURFACES
- Descriptors DEC
- BEAMS; HEAT TREATMENTS; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS
Optional Information
- Secondary number(s)
- GB patent application 8116119.