Published 1990
| Version v1
Miscellaneous
In-situ analysis of RHEED III-V semiconductors grown by MBE
Creators
- 1. Sao Paulo Univ., Sao Carlos, SP (Brazil). Inst. de Fisica e Quimica
Description
Published in summary form only
Availability note (English)
Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil.Additional details
Additional titles
- Original title (Portuguese)
- Analise in-situ de RHEED de semicondutores III-V crescidos por MBE
Publishing Information
- Imprint Title
- Proceedings of the 13. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 284 p.
- Journal Page Range
- p. 227.
Conference
- Title
- 13. National Meeting on Condensed Matter Physics.
- Dates
- 8-12 May 1990.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 22039573
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- CRYSTAL GROWTH; ELECTRON DIFFRACTION; EPITAXY; GALLIUM ARSENIDES; ROUGHNESS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; GALLIUM COMPOUNDS; PNICTIDES; SCATTERING; SURFACE PROPERTIES
Optional Information
- Notes
- Imprint:Anais do 13. Encontro Nacional de Fisica da Materia Condensada.