Analysis of IMP-grown CdxHg1-xTe using helium ion RBS

Epitaxial layers of CdxHg1-xTe may be grown by the IMP (interdiffused multilayer process) technique in which alternate layers of CdTe and HgTe are deposited by metalorganic vapour phase epitaxy and interdiffused at the growth temperature. The infrared optical properties of the layers are critically dependent upon the value of x which may be tailored by controlling the relative thickness of the CdTe and HgTe sublayers. This paper describes the application of helium ion RBS to the study of the completeness of interdiffusion between sublayers and the application of channelling to the study of their crystalline quality. (orig.)