Published September 2003
| Version v1
Journal article
Dependence of activation energy of A(+)-centers on width of quantum wells in GaAs/AlGaAs structures
- 1. RAN, Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe, Sankt-Peterburg (Russian Federation)
Description
Luminescence measurements of structures with several GaAs/AlGaAs quantum wells (QW) containing A(+) centers have been carried out for determination dependence of the activation energy on QW width. It is shown that the activation energy of A(+) centers in a QW is larger than in bulk material, increasing with decreasing of the QW width. The energy in 10 nm QW became 10 times as much as in bulk material. It has been found that the activation energy of A(+) centers depends on their concentration
Abstract (Russian)
Проведены люминесцентные измерения структур с несколькими квантовыми ямами GaAs/AlGaAs, содержащими А(+)-центры, с целью определения зависимости энергии активации А(+)-центров от ширины квантовых ям. Показано, что с уменьшением ширины ям энергия активации А(+)-центров значительно возрастает, причем в ямах шириной 10 нм энергия активации в 10 раз больше, чем в объемном материале. Замечено, что энергия активации А(+)-центров зависит от их концентрацииAdditional details
Additional titles
- Original title (Russian)
- Зависимость энергии активации A(+)-центров от ширины квантовых ям в структурах GaAs/AlGaAs
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 37
- Journal Issue
- 9
- Journal Page Range
- p. 1114-1116
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 36037804
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- A CENTERS; ACTIVATION ENERGY; ALUMINIUM ARSENIDES; EMISSION SPECTRA; ENERGY GAP; GALLIUM ARSENIDES; HETEROJUNCTIONS; PHOTOLUMINESCENCE; QUANTUM WELLS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EMISSION; ENERGY; GALLIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; POINT DEFECTS; SEMICONDUCTOR JUNCTIONS; SPECTRA; VACANCIES
Optional Information
- Notes
- 6 refs., 3 figs.