Published February 13, 2008
| Version v1
Journal article
Electronic structure and self-assembly of cross-linked semiconductor nanocrystal arrays
- 1. Racah Institute of Physics, and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel)
- 2. Institute of Chemistry, and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem 91904 (Israel)
Description
We studied the electronic level structure of assemblies of InAs quantum dots and CdSe nanorods cross-linked by 1,4-phenylenediamine molecules using scanning tunneling spectroscopy. We found that the bandgap in these arrays is reduced with respect to the corresponding ligand-capped nanocrystal arrays. In addition, a pronounced sub-gap spectral structure commonly appeared which can be attributed to unpassivated nanocrystal surface states or associated with linker-molecule-related levels. The exchange of the ligands by the linker molecules also affected the structural array properties. Most significantly, clusters of close-packed standing CdSe nanorods were formed
Additional details
Identifiers
- DOI
- 10.1088/0957-4484/19/6/065201;
- PII
- S0957-4484(08)62186-8;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 19
- Journal Issue
- 6
- Journal Page Range
- p. 065201
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39039561
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SELENIDES; ELECTRONIC STRUCTURE; INDIUM ARSENIDES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TUNNEL EFFECT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES; SELENIDES; SELENIUM COMPOUNDS