Deposition of silicon carbide coatings on particles in a fluidized bed using silane and tetramethylsilane: a feasibility study

Deposition of silicon carbide (SiC) coatings from compounds such as methyltrichlorosilane (CH3SiCl3) results in corrosive chlorine-containing byproducts. The feasibility of depositing coatings from SiH4 and Si(CH3)4, which contain no chlorine, was briefly studied. Coatings of SiC were deposited from Si(CH3)4 over the temperature range 1025 to 15250C in beds of particles fluidized with either H2 or Ar. The densest coatings were deposited at 10250C, but none approached the theoretical density of SiC. A SiC coating was also deposited at 8000C from a mixture of SiH4, C2H4, and H2