Published August 1987
| Version v1
Report
Photoelectromagnetic effect in p-type Hg1-xCdxTe liquid phase epitaxial layers
Description
Published in summary form only
Additional details
Publishing Information
- Imprint Title
- Research laboratories annual report 1986
- Imprint Pagination
- 286 p.
- Journal Page Range
- p. 61.
- Report number
- IA--1427
INIS
- Country of Publication
- Israel
- Country of Input or Organization
- Israel
- INIS RN
- 19017178
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CADMIUM TELLURIDES; CARRIER LIFETIME; MAGNETIC FIELDS; MERCURY TELLURIDES; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; PHOTOELECTRIC EFFECT; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; LIFETIME; MATERIALS; MERCURY COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS