Published 1974
| Version v1
Journal article
Sign of the principal g values of deep impurity and radiation induced defects in silicon and diamond
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Cryst. Lattice Defects
- Journal Volume
- 5
- Journal Issue
- 3-4
- Series
- Cryst. Lattice Defects.
- Journal Page Range
- 261-268
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 6193212
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIAMONDS; ELECTRON SPIN RESONANCE; GYROMAGNETIC RATIO; IMPURITIES; INTERSTITIALS; LABORATORY EQUIPMENT; MICROWAVE RADIATION; NEUTRON BEAMS; PHYSICAL RADIATION EFFECTS; POLARIZED BEAMS; SILICON
- Descriptors DEC
- BEAMS; CARBON; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; MAGNETIC RESONANCE; MINERALS; NONMETALS; NUCLEON BEAMS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; RESONANCE; SEMIMETALS