Secondary electron emissiometry of a surface of thermally oxidated aluminium

Secondary electron emission studies on oxidated aluminium films have been made after annealing at 475-550 Deg C for time period from 5 min up to 16 h. Experimental dependences for the true secondary electron yield on the films thickness were measured in film-substrate system. These dependences look as monotonic increasing function with flattening out. Such trend of curves is explained by peculiarities of secondary electron emission during dielectric layer formation on the metal. The function describing the dependence of total defect concentration in the film on the thickness of the formed oxide films was calculated. It was suggested use these curves as calibration ones for the determination of the thickness of oxide film on the metal with the absolute sensitivity of 0.05 nm