Published March 11, 2001
| Version v1
Journal article
X-ray luminescence spectra of graded-gap AlxGa1-xAs structures
Description
X-ray luminescence from graded-gap AlxGa1-xAs structures is investigated. The presented measurements show that only part of the AlxGa1-xAs layer with the Al fraction x<0.1 is active as a light emitter
Additional details
Identifiers
- PII
- S0168900200010937;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 460
- Journal Issue
- 1
- Journal Page Range
- p. 41-44
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Germany
- INIS RN
- 34008565
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; LAYERS; PHOTOLUMINESCENCE; PHOTON EMISSION; X RADIATION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; EMISSION; GALLIUM COMPOUNDS; IONIZING RADIATIONS; LUMINESCENCE; PHOTON EMISSION; PNICTIDES; RADIATIONS
Optional Information
- Copyright
- Copyright (c) 2001 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.