Published March 14, 2014 | Version v1
Journal article

A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

  • 1. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore (Singapore)
  • 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054 (China)
  • 3. School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China)
  • 4. GLOBALFOUNDRIES Singapore Pte Ltd, 738406 Singapore (Singapore)

Description

Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε1) and imaginary (ε2) parts of the dielectric function decrease significantly, and ε2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
115
Journal Issue
10
Journal Page Range
p. 103512-103512.5
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
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