Published August 21, 2005 | Version v1
Journal article

GEM operation in helium and neon at low temperatures

  • 1. Budker Institute of Nuclear Physics, Lavrentiev prospect 11, Novosibirsk 630090 (Russian Federation)
  • 2. Nevis Laboratories, Columbia University, Irvington, NY 10533 (United States)
  • 3. Brookhaven National Laboratory, Upton, NY 11973 (United States)

Description

We study the performance of Gas Electron Multipliers (GEMs) in gaseous He, Ne and Ne+H2 at temperatures in the range of 2.6-293 K. In He, at temperatures between 62 and 293 K, the triple-GEM structures often operate at rather high gains, exceeding 1000. There is an indication that this high gain is achieved by the Penning effect in the gas impurities released by outgassing. At lower temperatures, the gain-voltage characteristics are significantly modified probably due to the freeze-out of impurities. In particular, the double- and single-GEM structures can operate down to 2.6 K at gains reaching only several tens at a gas density of about 0.5 g/l; at higher densities the maximum gain drops further. In Ne, the maximum gain also drops at cryogenic temperatures. The gain drop in Ne at low temperatures can be reestablished in Penning mixtures of Ne+H2: very high gains, exceeding 104, have been obtained in these mixtures at 50-60 K, at a density of 9.2 g/l corresponding to that of saturated Ne vapor near 27 K. The results obtained are relevant in the fields of two-phase He and Ne detectors for solar neutrino detection and electron avalanching at low temperatures

Additional details

Identifiers

DOI
10.1016/j.nima.2005.04.066;
arXiv
arXiv:physics/0504184v1;
PII
S0168-9002(05)01083-1;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
548
Journal Issue
3
Journal Page Range
p. 487-498
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.