High energy heavy ion beam lithography in silicon

As high energy ions travel through a crystalline semiconductor materials they produce damage along the path which results in resistance to some of the wet chemical etching. A series of preliminary experiments have been performed at the Louisiana Accelerator Center (LAC) to examine the feasibility of irradiating high energy (keV-MeV) ions such as protons, xenon and gold through microscale masked structures on crystalline (n-type) Si substrates followed by wet chemical etch with KOH for attaining deep micromachining in Si. The results of these experiments are reported