Published December 1979
| Version v1
Journal article
A new method to monitor the beam profile in high-current ion implantation systems
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- J. Phys., E (London). Sci. Instrum.
- Journal Volume
- 12
- Series
- J. Phys., E (London). Sci. Instrum.
- Journal Page Range
- 1146-1147
- ISSN
- 0022-3735
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 11509395
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ARSENIC IONS; BEAM MONITORS; BEAM PROFILES; COLORATION; ION IMPLANTATION; OPACITY; SAPPHIRE; SILICON
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ALUMINIUM OXIDES; ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; CORUNDUM; ELEMENTS; IONS; MEASURING INSTRUMENTS; MINERALS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS
Optional Information
- Notes
- Brief item.